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Same model may have multiple batches, images only for reference.
BSP129L6327HTSA1 Real Image
Same model may have multiple batches, images only for reference.

BSP129L6327HTSA1

Part No BSP129L6327HTSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 240V 350MA SOT-223 / Trans MOSFET N-CH 240V 0.35A Automotive 4-Pin(3+Tab) SOT-223 T/R
Datasheet
BSP129L6327HTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series SIPMOS
Packaging Reel package
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 240V
Current - Continuous Drain (Id) @ 25°C 350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 0V, 10V
Vgs(th) (Maximum) @ Id 1V @ 108μA
Gate Charge (Qg) (Maximum) @ Vgs 5.7nC @ 5V
Input Capacitance (Ciss) (Maximum) @ Vds 108pF @ 25V
Vgs (Maximum) ±20V
FET Feature Depletion Mode
Power Dissipation (Maximum) 1.8W (Ta)
Rds On (Maximum) @ Id, Vgs 6 Ohm @ 350mA, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package PG-SOT223-4
Package TO-261-4, TO-261AA
Win Source Part Number 770425-BSP129L6327HTSA1
Popularity Medium
Supply and Demand Status Balance
Family Name BSP129L6327HTSA1
Introduction Date September 01, 1996
ECCN EAR99
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian BSP129L6327HTSA1 CAD Model

Description

The Infineon Technologies BSP129L6327HTSA1 is a depletion mode MOSFET technology discrete semiconductor product from Infineon Technologies.

  • Series: SIPMOS
  • Continuous Drain Current: 350mA (Ta)
  • Drain-Source Voltage: 240V
  • Gate-Source Voltage: ±20V
  • Rds On: 6 Ohm @ 350mA @ 10V
  • Package: TO-261-4, TO-261AA
  • Package: Reel
  • Compliance: Halogen-free, RoHS
  • Supply and Demand Status: Balanced

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