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BSP300H6327XUSA1

Part No BSP300H6327XUSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 190MA SOT-223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 190mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Input Capacitance 230pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.8W (Ta)
Maximum Rds On at Id,Vgs 20 Ohm @ 190mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT223-4
Dimension TO-261-4, TO-261AA
Win Source Part Number 1024441-BSP300H6327XUSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSP300H6327XUSA1 CAD Model

Description

The Infineon Technologies MOSFET is a high-performance N-Channel power transistor designed for use in a wide range of applications.

  • Manufacturer: Infineon Technologies
  • Product Type: MOSFET
  • Channel Type: N-Channel
  • Drain-Source Breakdown Voltage: 800V
  • Maximum Continuous Drain Current: 190mA @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 1mA
  • Maximum Input Capacitance: 230pF @ 25V
  • Package: PG-SOT223-4 (TO-261-4, TO-261AA)
  • Mounting Technology: SMD (SMT)
  • Power Dissipation: 1.8W (Ta)
  • Drive Voltage (max Rds On, min Rds On): 10V
  • Maximum Gate-Source Voltage: ±20V

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.6737 $58.5795
85+ $1.3734 $116.7390
135+ $1.3305 $179.6175
180+ $1.2875 $231.7500
235+ $1.2446 $292.4810
315+ $1.1159 $351.5085
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 16,900 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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