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Same model may have multiple batches, images only for reference.
BSP50E6327HTSA1 Real Image
Same model may have multiple batches, images only for reference.

BSP50E6327HTSA1

Part No BSP50E6327HTSA1
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Single
Description TRANS NPN DARL 45V 1A SOT-223
Datasheet
BSP50E6327HTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN - Darlington
Maximum Current Collector 1A
VCEO Maximum Collector-Emitter Breakdown Voltage 45V
Max Vce (sat) 1.8V @ 1mA, 1A
Collector Cut-off Current(Max) 10μA
Typical Gain (hFE) (Min) 2000 @ 500mA, 10V
Maximum Power Dissipation 1.5W
Frequency - Transition 200MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT223-4
Win Source Part Number 1024453-BSP50E6327HTSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSP50E6327HTSA1 CAD Model

Description

The Infineon Technologies BSP50E6327HTSA1 is a discrete semiconductor product suitable for use in integrated circuits.

  • Transition Frequency: 200MHz
  • Maximum Collector Current: 1A
  • Maximum Collector-Emitter Breakdown Voltage: 45V
  • Maximum Power Dissipation: 1.5W
  • Typical Gain (hFE): 2000 @ 500mA, 10V
  • Operating Temperature Range: 150°C (TJ)
  • Package: PG-SOT223-4
  • Market Popularity: Medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
310+ $0.1883 $58.3730
750+ $0.1548 $116.1000
1,155+ $0.1502 $173.4810
1,590+ $0.1455 $231.3450
2,050+ $0.1409 $288.8450
2,755+ $0.1259 $346.8545
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,000 pieces
MOQ: 310 pcs
Order Increment : 1 pcs
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