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Same model may have multiple batches, images only for reference.
BSR316PL6327HTSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

BSR316PL6327HTSA1

Part No BSR316PL6327HTSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 100V 0.36A SC-59
Datasheet
BSR316PL6327HTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 360mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 170μA
Max Gate Charge 7nC @ 10V
Max Input Capacitance 165pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 500mW (Ta)
Maximum Rds On at Id,Vgs 1.8 Ohm @ 360mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SC-59
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1024475-BSR316PL6327HTSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSR316PL6327HTSA1 CAD Model

Description

The Infineon Technologies MOSFET is a powerful electronic component designed for high-performance applications.

  • Maximum Power Dissipation: 500mW (Ta)
  • Drain-Source Breakdown Voltage: 100V
  • Channel Type: P-Channel
  • Gate-Source Threshold Voltage: 1V @ 170μA
  • Maximum Gate Charge: 7nC @ 10V
  • Package: PG-SC-59

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Quantity Unit Price Ext. Price
3+ $20.1698 $60.5094
7+ $16.5500 $115.8500
11+ $16.0326 $176.3586
15+ $15.5151 $232.7265
20+ $14.9988 $299.9760
26+ $13.4465 $349.6090
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