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Same model may have multiple batches, images only for reference.
BSS123NH6433XTMA1 Real Image
Same model may have multiple batches, images only for reference.

BSS123NH6433XTMA1

Part No BSS123NH6433XTMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 0.19A SOT-23
Datasheet
BSS123NH6433XTMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 190mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1.8V @ 13μA
Max Gate Charge 0.9nC @ 10V
Max Input Capacitance 20.9pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 500mW (Ta)
Maximum Rds On at Id,Vgs 6 Ohm @ 190mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT23-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1024485-BSS123NH6433XTMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSS123NH6433XTMA1 CAD Model

Description

The Infineon Technologies BSS123NH6433XTMA1 is an active N-channel MOSFET with a maximum drain-source breakdown voltage of 100V and a continuous drain current of 190mA @ 25°C.

  • Maximum Power Dissipation: 500mW
  • Package: PG-SOT23-3
  • Gate-Source Threshold Voltage: 1.8V @ 13μA
  • Maximum Rds On: 6 Ohm @ 190mA, 10V
  • Popularity: Medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
495+ $0.1018 $50.3910
1,200+ $0.0836 $100.3200
1,855+ $0.0810 $150.2550
2,555+ $0.0784 $200.3120
3,305+ $0.0757 $250.1885
4,420+ $0.0679 $300.1180
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,665 pieces
MOQ: 495 pcs
Order Increment : 1 pcs
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