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Same model may have multiple batches, images only for reference.
BSS127 E6327 Real Image
Same model may have multiple batches, images only for reference.

BSS127 E6327

Part No BSS127 E6327
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 0.021A SOT-23
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 21mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.6V @ 8μA
Max Gate Charge 1nC @ 10V
Max Input Capacitance 28pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 500mW (Ta)
Maximum Rds On at Id,Vgs 500 Ohm @ 16mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT23-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1024487-BSS127 E6327
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSS127 E6327 CAD Model

Description

The Infineon Technologies BSS127 E6327 is an N-Channel MOSFET with a maximum drain-source breakdown voltage of 600V and a continuous drain current @ 25°C of 21mA (Ta).

  • Gate-Source Threshold Voltage: 2.6V @ 8μA
  • Gate Charge (Max): 1nC @ 10V
  • Rds On (Max): 500 Ohm @ 16mA, 10V
  • Package: PG-SOT23-3
  • Junction Temperature (Max): 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
515+ $0.0972 $50.0580
1,255+ $0.0798 $100.1490
1,945+ $0.0773 $150.3485
2,675+ $0.0748 $200.0900
3,460+ $0.0723 $250.1580
4,630+ $0.0648 $300.0240
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Availability: 60,000 pieces
MOQ: 515 pcs
Order Increment : 1 pcs
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