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BSS205N H6327

Part No BSS205N H6327
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description BSS205N H6327 Infineon Technologies MOSFETs N-Ch 20V 2.5A SOT-23-3 datasheet, inventory, & pricing.
Sample
Rohs State rohs
ECAD Module
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Manufacturer Infineon
Product Category MOSFETs
RoHS Details
Technology Si
Mounting Style SMD/SMT
Package / Case SOT-23-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 20 V
Id - Continuous Drain Current 2.5 A
Rds On - Drain-Source Resistance 40 mOhms
Vgs - Gate-Source Voltage - 12 V, 12 V
Vgs th - Gate-Source Threshold Voltage 950 mV
Qg - Gate Charge 2.1 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 500 mW
Channel Mode Enhancement
Qualification AEC-Q100
Packaging Reel
Brand Infineon Technologies
Configuration Single
Fall Time 2.4 ns
Forward Transconductance - Min 8.5 S
Product Type MOSFETs
Rise Time 2.9 ns
Series BSS205
Factory Pack Quantity Factory Pack Quantity 3000
Subcategory Transistors
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 11 ns
Typical Turn-On Delay Time 5.8 ns
Part # Aliases BSS25NH6327XT SP000929180 BSS205NH6327XTSA1
Unit Weight 0.000282 oz
Ultra Librarian 3D Model Ultra Librarian BSS205N H6327 CAD Model

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