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BSS670S2LL6327HTSA1

Part No BSS670S2LL6327HTSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 540MA SOT-23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 540mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 2.7μA
Max Gate Charge 2.26nC @ 10V
Max Input Capacitance 75pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 360mW (Ta)
Maximum Rds On at Id,Vgs 650 mOhm @ 270mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT23-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1024527-BSS670S2LL6327HTSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSS670S2LL6327HTSA1 CAD Model

Description

The Infineon Technologies BSS670S2LL6327HTSA1 MOSFET is a high-performance N-channel polarity device that is designed for use in a wide range of applications.

  • Polarity: N-channel
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 540mA
  • Package: PG-SOT23-3
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On at Id,Vgs: 650 mOhm @ 270mA, 10V
  • Status: obsolete (EOL)
  • Popularity: medium
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
640+ $0.0907 $58.0480
1,555+ $0.0745 $115.8475
2,405+ $0.0721 $173.4005
3,315+ $0.0698 $231.3870
4,285+ $0.0675 $289.2375
5,730+ $0.0605 $346.6650
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 211,000 pieces
MOQ: 640 pcs
Order Increment : 1 pcs
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