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BSS816NWH6327XTSA1

Part No BSS816NWH6327XTSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 1.4A SOT323
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 1.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 2.5V
Gate-Source Threshold Voltage 0.75V @ 3.7μA
Max Gate Charge 0.6nC @ 2.5V
Max Input Capacitance 180pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 500mW (Ta)
Maximum Rds On at Id,Vgs 160 mOhm @ 1.4A, 2.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT323-3
Dimension SC-70, SOT-323
Win Source Part Number 1024533-BSS816NWH6327XTSA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BSS816NWH6327XTSA1 CAD Model

Description

The BSS816NWH6327XTSA1 from Infineon Technologies is a MOSFET that is designed for discrete semiconductor products.

  • Popularity: Medium
  • Supply and Demand Status: Sufficient
  • Package: PG-SOT323-3
  • Maximum Power Dissipation: 500mW (Ta)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 1.4A (Ta)
  • Operating Temperature: -55°C to 150°C (TJ)
  • Maximum Rds On: 160 mOhm @ 1.4A, 2.5V
  • Gate-Source Threshold Voltage: 0.75V @ 3.7μA
  • Manufacturer: Infineon Technologies
  • Manufacturer Homepage: www.infineon.com

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Pricing & Ordering

Quantity Unit Price Ext. Price
750+ $0.0667 $50.0250
1,825+ $0.0548 $100.0100
2,825+ $0.0531 $150.0075
3,895+ $0.0514 $200.2030
5,045+ $0.0496 $250.2320
6,745+ $0.0445 $300.1525
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 32,612 pieces
MOQ: 750 pcs
Order Increment : 1 pcs
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