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BSS83PL6327HTSA1

Part No BSS83PL6327HTSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 330MA SOT-23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 330mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 80μA
Max Gate Charge 3.57nC @ 10V
Max Input Capacitance 78pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 360mW (Ta)
Maximum Rds On at Id,Vgs 2 Ohm @ 330mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT23-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 101931-BSS83PL6327HTSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSS83PL6327HTSA1 CAD Model

Description

Product Description

The BSS83PL6327HTSA1 is a high-performing P-channel MOSFET tailored for applications requiring rapid switching and low on-resistance. With its robust build and enhanced thermal characteristics, this component is essential for modern electronic designs seeking durability and efficiency.

Features and Benefits

  • Robust Construction: Ensures long-lasting performance and reliability.
  • Rapid Switching: Facilitates high-speed electronic applications.
  • Low On-Resistance: Reduces heat generation and power loss.
  • High Thermal Endurance: Maintains performance under high-temperature conditions.

Applications

  • Industrial automation systems
  • Consumer electronics power supplies
  • Energy-efficient lighting solutions
  • High-frequency converters

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