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BSS87L6327HTSA1

Part No BSS87L6327HTSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 240V 260MA SOT-89
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 240V
Continuous Drain Current at 25°C 260mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1.8V @ 108μA
Max Gate Charge 5.5nC @ 10V
Max Input Capacitance 97pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1W (Ta)
Maximum Rds On at Id,Vgs 6 Ohm @ 260mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT89
Dimension TO-243AA
Win Source Part Number 129793-BSS87L6327HTSA1
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BSS87L6327HTSA1 CAD Model

Description

Description

The BSS87L6327HTSA1 is a high-performance MOSFET designed for applications requiring precision and efficiency. This N-channel MOSFET allows fast switching with high-frequency operations.

Features and Benefits

  • High switching efficiency: Reduces energy losses.
  • Rugged build: Suitable for harsh environments.
  • Supports high current loads: Up to 1A continuous drain current.
  • Enhanced gate charge characteristics.

Applications

  • Switched-mode power supplies.
  • Automotive control systems.
  • Power inverters.
  • High-frequency amplifiers.

Additional Details

Its versatile design, with a capability to operate up to 150°C, ensures reliability and efficiency across various environmental and operational conditions.

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