The Infineon Technologies OptiMOS 5 BSZ0910 MOSFET is an N-Channel FET type that comes with a drain to source voltage (Vdss) of 30V and a power dissipation (Max) of 2.1W (Ta), 37W (Tc).

• Manufacturer: Infineon Technologies
• Product: OptiMOS 5 BSZ0910
• Channel Type: N-Channel
• Drain to Source Voltage (Vdss): 30V
• Power Dissipation (Max): 2.1W (Ta), 37W (Tc)
• Drive Voltage: 4.5V, 10V
• Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
• Package: 8-PowerTDFN
• Operating Temperature: -55°C to 150°C (TJ)
• Base Product Number: BSZ0910
• Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10V