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Same model may have multiple batches, images only for reference.
SIZ348DT-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIZ348DT-T1-GE3

Part No SIZ348DT-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIZ348DT-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Vishay Siliconix
Series TrenchFET® Gen IV
Package Tape & Reel
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 18A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs 7.12mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 820pF @ 15V
Power - Max 3.7W (Ta), 16.7W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case 8-PowerWDFN
Supplier Device Package 8-Power33 (3x3)
Base Product Number SIZ348
Other Names SIZ348DT-T1-GE3TR,SIZ348DT-GE3,SIZ348DT-T1-GE3DKR,SIZ348DT-T1-GE3CT
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278503-SIZ348DT-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIZ348DT-T1-GE3 CAD Model

Description

The Vishay Siliconix SIZ348DT-T1-GE3 is a dual N-channel MOSFET transistor that is a part of the TrenchFET Gen IV series.

  • Drain to Source Voltage: 30V
  • Rds On (Max): 7.12mOhm @ 15A, 10V
  • Vgs(th) (Max): 2.4V @ 250μA
  • Power Capacity: 3.7W (Ta), 16.7W (Tc)
  • Package: 8-PowerWDFN package

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Pricing & Ordering

Quantity Unit Price Ext. Price
20+ $2.6195 $52.3900
47+ $2.1493 $101.0171
73+ $2.0821 $151.9933
100+ $2.0150 $201.5000
129+ $1.9478 $251.2662
172+ $1.7463 $300.3636
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,000 pieces
MOQ: 20 pcs
Order Increment : 1 pcs
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