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BSZ097N04LS G

Part No BSZ097N04LS G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 40A TSDSON-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series OptiMOS
Packaging Reel package
Channel Type Type N
Technology MOSFET
Drain Source Voltage 40V
Current - Continuous Drain (Id) @ 25°C 12A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 2V @ 14μA
Gate Charge (Qg) (Maximum) @ Vgs 24nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 1900pF @ 20V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 2.1W (Ta), 35W (Tc)
Rds On (Maximum) @ Id, Vgs 9.7 mOhm @ 20A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package PG-TSDSON-8
Package 8-PowerTDFN
Win Source Part Number 770441-BSZ097N04LS G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSZ097N04LS G CAD Model

Description

The BSZ097N04LS G from Infineon Technologies is a medium popularity electronic component.

  • Series: OptiMOS
  • Package: PG-TSDSON-8
  • Package: 8-PowerTDFN
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Channel Type: N
  • Drain Source Voltage: 40V
  • Vgs(th) (Maximum) @ Id: 2V @ 14μA
  • Gate Charge (Qg) (Maximum) @ Vgs: 24nC @ 10V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 1900pF @ 20V
  • Vgs (Maximum): ±20V
  • Power Dissipation (Maximum) (Ta): 2.1W
  • Power Dissipation (Maximum) (Tc): 35W
  • Rds On (Maximum) @ Id, Vgs: 9.7 mOhm @ 20A, 10V
  • Supply and Demand Status: Balance

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