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Same model may have multiple batches, images only for reference.
BSZ180P03NS3EGATMA1 Real Image
Same model may have multiple batches, images only for reference.

BSZ180P03NS3EGATMA1

Part No BSZ180P03NS3EGATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 39.6A TSDSON-8
Datasheet
BSZ180P03NS3EGATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 9A (Ta), 39.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3.1V @ 48μA
Max Gate Charge 30nC @ 10V
Max Input Capacitance 2220pF @ 15V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 2.1W (Ta), 40W (Tc)
Maximum Rds On at Id,Vgs 18 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TSDSON-8
Dimension 8-PowerTDFN
Win Source Part Number 1024565-BSZ180P03NS3EGATMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSZ180P03NS3EGATMA1 CAD Model

Description

The Infineon Technologies 1024565-BSZ180P03NS3EGATMA1 is a P-Channel MOSFET designed for discrete semiconductor products.

  • Power Dissipation: 2.1W (Ta), 40W (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 9A (Ta), 39.5A (Tc)
  • Gate-Source Threshold Voltage: 3.1V @ 48μA
  • Maximum Gate Charge: 30nC @ 10V
  • Maximum Rds On @ Id,Vgs: 18 mOhm @ 20A, 10V
  • Mounting Type: SMD (SMT)
  • Dimension: 8-PowerTDFN

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.6255 $59.4225
230+ $0.5133 $118.0590
350+ $0.4973 $174.0550
480+ $0.4813 $231.0240
625+ $0.4652 $290.7500
835+ $0.4171 $348.2785
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Availability: 5,000 pieces
MOQ: 95 pcs
Order Increment : 1 pcs
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