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BTS282ZE3180AATMA2

Part No BTS282ZE3180AATMA2
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 49V 80A TO-220-7
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 49V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 240μA
Max Gate Charge 232nC @ 10V
Max Input Capacitance 4800pF @ 25V
Maximum Gate-Source Voltage ±20V
FET Feature Temperature Sensing Diode
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 6.5 mOhm @ 36A, 10V
Temperature Range - Operating -40°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-7-1
Dimension TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
Win Source Part Number 1024863-BTS282ZE3180AATMA2
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BTS282ZE3180AATMA2 CAD Model

Description

The Infineon Technologies 1024863-BTS282ZE3180AATMA2 is a discrete semiconductor product that comes in a PG-TO263-7-1 package.

  • Mounting: SMD (SMT) technology
  • Type: MOSFET
  • Polarity: N-channel
  • Power Dissipation: 300W (Tc)
  • Drive Voltage: 4.5V, 10V
  • Drain-Source Breakdown Voltage: 49V
  • Continuous Drain Current @ 25°C: 80A (Tc)
  • Gate-Source Threshold Voltage: 2V @ 240μA
  • Gate Charge (Max): 232nC @ 10V
  • Input Capacitance (Max): 4800pF @ 25V
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $14.5458 $58.1832
9+ $13.6074 $122.4666
14+ $13.1381 $183.9334
19+ $12.1997 $231.7943
25+ $11.7306 $293.2650
31+ $11.2613 $349.1003
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,945 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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