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Same model may have multiple batches, images only for reference.
BTS282ZE3230AKSA2 Real Image
Same model may have multiple batches, images only for reference.

BTS282ZE3230AKSA2

Part No BTS282ZE3230AKSA2
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 49V 80A TO220-7
Datasheet
BTS282ZE3230AKSA2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 49V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 240μA
Max Gate Charge 232nC @ 10V
Max Input Capacitance 4800pF @ 25V
Maximum Gate-Source Voltage ±20V
FET Feature Temperature Sensing Diode
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 6.5 mOhm @ 36A, 10V
Temperature Range - Operating -40°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-7
Dimension TO-220-7
Win Source Part Number 1024862-BTS282ZE3230AKSA2
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BTS282ZE3230AKSA2 CAD Model

Description

The BTS282ZE3230AKSA2 is a N-Channel MOSFET from Infineon Technologies.

  • Drain-Source Breakdown Voltage: 49V
  • Continuous Drain Current: 80A @ 25°C
  • Feature: Temperature Sensing Diode
  • Power Dissipation: 300W @ Tc
  • Package: PG-TO220-7
  • Maximum Rds On: 6.5 mOhm @ Id,Vgs of 36A, 10V

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Quantity Unit Price Ext. Price
9+ $7.0187 $63.1683
21+ $5.7590 $120.9390
32+ $5.5790 $178.5280
43+ $5.3991 $232.1613
56+ $5.2191 $292.2696
75+ $4.6791 $350.9325
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Availability: 2,200 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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