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BUZ101SL

Part No BUZ101SL
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL  POWER MOSFET / N-Channel 55 V 20A (Tc) 55W (Tc) Through Hole PG-TO220-3-1
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series SIPMOS®
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 40mOhm @ 14A, 10V
Vgs(th) (Max) @ Id 2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs 36 nC @ 10 V
Vgs (Max) ±14V
Input Capacitance (Ciss) (Max) @ Vds 700 pF @ 25 V
Power Dissipation (Max) 55W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1
Package / Case TO-220-3
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 85581-BUZ101SL
Ultra Librarian 3D Model Ultra Librarian BUZ101SL CAD Model

Description

Overview

The BUZ101SL offers outstanding performance in terms of low power dissipation, making it perfect for energy-efficient designs. This N-channel MOSFET is built for durability and efficiency.

Features and Benefits

  • Exceptional thermal performance.
  • Fast recovery diode.
  • High avalanche energy capacity.

Applications

  • Switch-mode power supplies (SMPS)
  • Battery management systems
  • Lighting control circuits

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Pricing & Ordering

Quantity Unit Price Ext. Price
250+ $0.2356 $58.9000
600+ $0.1940 $116.4000
930+ $0.1871 $174.0030
1,275+ $0.1813 $231.1575
1,645+ $0.1756 $288.8620
2,210+ $0.1571 $347.1910
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,270 pieces
MOQ: 250 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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