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Same model may have multiple batches, images only for reference.
BUZ31L H Real Image
Same model may have multiple batches, images only for reference.

BUZ31L H

Part No BUZ31L H
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 13.5A TO220-3
Datasheet
BUZ31L H Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 13.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Gate-Source Threshold Voltage 2V @ 1mA
Max Input Capacitance 1600pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 95W (Tc)
Maximum Rds On at Id,Vgs 200 mOhm @ 7A, 5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-3
Dimension TO-220-3
Win Source Part Number 1025470-BUZ31L H
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BUZ31L H CAD Model

Description

The Infineon Technologies BUZ31L H is an N-channel MOSFET with a drain-source breakdown voltage of 200V and a continuous drain current of 13.5A @ 25°C.

  • Application: Designed for use in discrete semiconductor products
  • Package: PG-TO-220-3
  • Maximum Power Dissipation: 95W
  • Maximum Rds On: 200 mOhm @ 7A and 5V
  • Gate-Source Threshold Voltage: 2V @ 1mA
  • Maximum Input Capacitance: 1600pF @ 25V
  • Suitable for: Use in applications that require a high voltage and current capacity

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $11.1215 $66.7290
13+ $9.1257 $118.6341
20+ $8.8404 $176.8080
28+ $8.5551 $239.5428
35+ $8.2698 $289.4430
47+ $7.4139 $348.4533
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Availability: 16,500 pieces
MOQ: 6 pcs
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