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Same model may have multiple batches, images only for reference.
BUZ32HXKSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

BUZ32HXKSA1

Part No BUZ32HXKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL  POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series SIPMOS®
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 9.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 400mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 530 pF @ 25 V
Power Dissipation (Max) 75W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3
Package / Case TO-220-3
Standard Package 507 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1003486-BUZ32HXKSA1
Ultra Librarian 3D Model Ultra Librarian BUZ32HXKSA1 CAD Model

Description

The BUZ32HXKSA1 is an active N-channel MOSFET transistor designed for use in discrete semiconductor products - Transistors applications.

  • Drain to Source Voltage (Vdss): 200V
  • Continuous Drain Current (Id): 9.5A @ 25°C
  • On-Resistance (Rds On): 400mOhm @ 6A and 10V
  • Power Dissipation: 75W
  • Operating Temperature Range: -55°C to 150°C

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