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Same model may have multiple batches, images only for reference.
BUZ73LHXKSA1 Real Image
Same model may have multiple batches, images only for reference.

BUZ73LHXKSA1

Part No BUZ73LHXKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 7A TO220-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Gate-Source Threshold Voltage 2V @ 1mA
Max Input Capacitance 840pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 40W (Tc)
Maximum Rds On at Id,Vgs 400 mOhm @ 3.5A, 5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-3
Dimension TO-220-3
Win Source Part Number 1025476-BUZ73LHXKSA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BUZ73LHXKSA1 CAD Model

Description

The supply and demand status is sufficient.

  • MOSFET Technology: N-Channel
  • Power Dissipation: 40W (Tc)
  • Packaging: Tube/rail
  • Mounting: Through hole
  • Drive Voltage (max Rds On, Min Rds On): 5V
  • Temperature Range: -55°C to 150°C (TJ)
  • Case/Package: PG-TO-220-3
  • Dimension: TO-220-3
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current at 25°C: 7A (Tc)
  • Gate-Source Threshold Voltage: 2V @ 1mA
  • Max Input Capacitance: 840pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On at Id,Vgs: 400 mOhm @ 3.5A, 5V

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