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Same model may have multiple batches, images only for reference.
CY7S1061G30-10BVXIT Real Image
Same model may have multiple batches, images only for reference.

CY7S1061G30-10BVXIT

Part No CY7S1061G30-10BVXIT
Manufacturer Infineon Technologies
Catalog Memory
Description IC SRAM 16MBIT PARALLEL 48VFBGA / SRAM - Synchronous, SDR Memory IC 16Mbit Parallel 10 ns 48-VFBGA (6x8)
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Integrated Circuits (ICs) - Memory - Memory
Mfr Infineon Technologies
Package Tape & Reel
Memory Type Volatile
Memory Format SRAM
Technology SRAM - Synchronous, SDR
Memory Size 16Mbit
Memory Organization 1M x 16
Memory Interface Parallel
Write Cycle Time - Word, Page 10ns
Access Time 10 ns
Voltage - Supply 2.2V ~ 3.6V
Temperature Range - Operating -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 48-VFBGA
Supplier Device Package 48-VFBGA (6x8)
Base Product Number CY7S1061
Standard Package 2,000
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN 3A991B2A
HTSUS 8542.32.0041
Win Source Part Number 1347905-CY7S1061G30-10BVXIT
Ultra Librarian 3D Model Ultra Librarian CY7S1061G30-10BVXIT CAD Model

Description

The Infineon Technologies CY7S1061G30-10BVXIT is a 16Mbit SRAM memory chip that is designed for use in a wide range of electronic devices.

  • Technology: Synchronous SRAM
  • Memory Type: Volatile
  • Memory Size: 16Mbit
  • Access Time: 10ns
  • Voltage Supply: 2.2V to 3.6V
  • Mounting: Surface Mount
  • Package/Case: 48-VFBGA
  • Memory Format: SRAM
  • Memory Interface: Parallel
  • Write Cycle Time: 10ns
  • Operating Temperature: -40°C to 85°C (TA)
  • ECCN: 3A991B2A

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MOQ: 7 pcs
Order Increment : 1 pcs
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