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Same model may have multiple batches, images only for reference.
CY7S1061GE30-10BVXIT Real Image
Same model may have multiple batches, images only for reference.

CY7S1061GE30-10BVXIT

Part No CY7S1061GE30-10BVXIT
Manufacturer Infineon Technologies
Catalog Memory
Description IC SRAM 16MBIT PARALLEL 48VFBGA / SRAM - Synchronous, SDR Memory IC 16Mbit Parallel 10 ns 48-VFBGA (6x8)
Datasheet
CY7S1061GE30-10BVXIT Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Integrated Circuits (ICs) - Memory - Memory
Mfr Infineon Technologies
Package Tape & Reel
Memory Type Volatile
Memory Format SRAM
Technology SRAM - Synchronous, SDR
Memory Size 16Mbit
Memory Organization 1M x 16
Memory Interface Parallel
Write Cycle Time - Word, Page 10ns
Access Time 10 ns
Voltage - Supply 2.2V ~ 3.6V
Temperature Range - Operating -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 48-VFBGA
Supplier Device Package 48-VFBGA (6x8)
Base Product Number CY7S1061
Standard Package 2,000
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN 3A991B2A
HTSUS 8542.32.0041
Win Source Part Number 1348355-CY7S1061GE30-10BVXIT
Ultra Librarian 3D Model Ultra Librarian CY7S1061GE30-10BVXIT CAD Model

Description

The Infineon Technologies CY7S1061GE30-10BVXIT is a synchronous SRAM memory integrated circuit with a 16Mbit memory size and 10ns access time.

  • Manufacturer: Infineon Technologies
  • Memory Type: Synchronous SRAM
  • Memory Size: 16Mbit
  • Access Time: 10ns
  • Voltage Supply: 2.2V to 3.6V
  • Operating Temperature: -40°C to 85°C (TA)
  • Package / Case: 48-VFBGA
  • Package: Tape & Reel
  • Standard Package: 2,000
  • REACH Status: Unaffected

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