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Same model may have multiple batches, images only for reference.
FF600R12KE3NOSA1
Same model may have multiple batches, images only for reference.

FF600R12KE3NOSA1

Part No FF600R12KE3NOSA1
Manufacturer Infineon Technologies
Catalog IGBTs - Modules
Description IGBT MODULE 1200V 600A / IGBT Module 2 Independent 1200 V 850 A 2.8 kW Chassis Mount Module
Datasheet
FF600R12KE3NOSA1 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Modules
Manufacturer Infineon Technologies
Packaging Tray
Product Status Obsolete
Configuration 2 Independent
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 850 A
Power - Max 2.8 kW
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 600A
Current - Collector Cutoff (Max) 5 mA
Input Standard
NTC Thermistor No
Temperature Range - Operating -40°C ~ 125°C (TJ)
Mounting Chassis Mount
Case / Package Module
Supplier Device Package Module
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number 2156-FF600R12KE3NOSA1,INFINFFF600R12KE3NOSA1,SP000100570
Standard Package 2
Win Source Part Number 1324190-FF600R12KE3NOSA1
Ultra Librarian 3D Model Ultra Librarian FF600R12KE3NOSA1 CAD Model

Description

The 1324190-FF600R12KE3NOSA1 is an IGBT transistor module with a voltage collector-emitter breakdown of 1200V and a maximum current collector of 850A from Infineon Technologies.

  • Voltage Collector-Emitter Breakdown: 1200V
  • Maximum Current Collector: 850A
  • Configuration: 2 independent IGBTs
  • Package: Module
  • Vce(on): 2.15V @ 15V, 600A
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Power: 2.8kW
  • Temperature Range: -40°C to 125°C (TJ)

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