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IAUS300N08S5N011ATMA1

Part No IAUS300N08S5N011ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET_(75V 120V( PG-HSOG-8 / N-Channel 80 V 410A (Tj) 375W (Tc) Surface Mount PG-HSOG-8-1
Datasheet
Sample
Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 410A (Tj)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 1.1mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.8V @ 275µA
Gate Charge (Qg) (Max) @ Vgs 231 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 16250 pF @ 40 V
Power Dissipation (Max) 375W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-HSOG-8-1
Package / Case 8-PowerSFN
Standard Package 1,800
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1337792-IAUS300N08S5N011ATMA1
Ultra Librarian 3D Model Ultra Librarian IAUS300N08S5N011ATMA1 CAD Model

Description

The OptiMOS™ MOSFET (Metal Oxide) N-Channel FET is a high-performance electronic component that is designed to provide a drain to source voltage (Vdss) of 80V.

  • FET Type: N-Channel
  • Vdss: 80V
  • Power Dissipation (Max): 375W (Tc)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerSFN
  • Supplier Device Package: PG-HSOG-8-1
  • Vgs (Max): ±20V
  • Temperature Range: -55°C to 175°C (TJ)

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