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IDH10G120C5XKSA1

Part No IDH10G120C5XKSA1
Manufacturer Infineon Technologies
Catalog Diodes, Rectifiers - Single
Description DIODE SCHOT 1200V 10A TO220-2-1 / Diode Silicon Carbide Schottky 1200 V 10A (DC) Through Hole PG-TO220-2-1
Datasheet
Sample
Rohs State rohs
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Category Discrete Semiconductor Products>Diodes - Rectifiers - Single
Mfr Infineon Technologies
Series CoolSiC™+
Package Tube
Diode Type Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 1200 V
Current - Average Rectified (Io) 10A (DC)
Voltage - Forward (Vf) (Max) @ If 1.8 V @ 10 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 62 µA @ 1200 V
Capacitance @ Vr, F 525pF @ 1V, 1MHz
Mounting Type Through Hole
Package / Case TO-220-2
Supplier Device Package PG-TO220-2-1
Operating Temperature - Junction -55°C ~ 175°C
Base Product Number IDH10G120
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080
Other Names 2156-IDH10G120C5XKSA1,IFEINFIDH10G120C5XKSA1,SP001079722
Standard Package 50
Win Source Part Number 1028113-IDH10G120C5XKSA1
Ultra Librarian 3D Model Ultra Librarian IDH10G120C5XKSA1 CAD Model

Description

The 1028113-IDH10G120C5XKSA1 is a silicon carbide Schottky diode designed for use in rectifier applications.

  • Maximum DC Reverse Voltage: 1200 V
  • Average Rectified Current: 10A
  • Forward Voltage: 1.8 V @ 10 A
  • Reverse Recovery Time: 0 ns
  • Capacitance @ 1V, 1MHz: 525pF
  • Junction Temperature: -55°C to 175°C
  • Package: TO-220-2
  • Mounting: Through-Hole
  • Series: CoolSiC™+
  • No Recovery Time: Greater than 500mA (Io)
  • Reverse Leakage Current: 62 µA @ 1200 V
  • Package: Tube
  • Standard Package: 50
  • Alternative Parts: STTH12R06D, STTH1212D, STTH1210DI, UGF12JT-E3/45, UG12JT-E3/45, MBR1060-E3/45IDH10G120C5, and SP001079722
  • MSL Level: 1 (Unlimited)
  • REACH: Unaffected
  • HTSUS Code: 8541.10.0080
  • Manufacturer: Infineon Technologies

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