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Same model may have multiple batches, images only for reference.
IGLD60R190D1SAUMA1
Same model may have multiple batches, images only for reference.

IGLD60R190D1SAUMA1

Part No IGLD60R190D1SAUMA1
Manufacturer Infineon Technologies
Catalog Transistors – FETs, MOSFETs – Single
Description GAN HV PG-LSON-8
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Package Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Vgs(th) (Max) @ Id 1.6V @ 960µA
Vgs (Max) -10V
Input Capacitance (Ciss) (Max) @ Vds 157 pF @ 400 V
Power Dissipation (Max) 62.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-LSON-8-1
Package / Case 8-LDFN Exposed Pad
Ultra Librarian 3D Model Ultra Librarian IGLD60R190D1SAUMA1 CAD Model

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