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IGOT60R070D1AUMA3

Part No IGOT60R070D1AUMA3
Manufacturer Infineon Technologies
Catalog FETs - Single
Description GANFET N-CH
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Win Source Part Number WS1202360-IGOT60R070D1AUMA3
Manufacturer Infineon Technologies
Category Discrete Semiconductor Products -Transistors -FETs, MOSFETs -Single FETs, MOSFETs
Series CoolGaN™
Package Tape & Reel (TR) Cut Tape (CT)
Product Status Active
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 600 V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Ultra Librarian 3D Model Ultra Librarian IGOT60R070D1AUMA3 CAD Model

Description

The Infineon Technologies CoolGaN™ GaNFET (Gallium Nitride Field-Effect Transistor) is a high-performance N-Channel transistor designed for various electronic applications.

  • Manufacturer: Infineon Technologies
  • Series: CoolGaN™
  • Channel Type: N-Channel
  • Vdss: 600V
  • Operating Temperature: -55°C to 150°C
  • Package: Tape and Reel

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