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IHW40T120

Part No IHW40T120
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
Sample
Rohs State Need to verify
ECAD Module
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Manufacturer Infineon Technologies
Win Source Part Number 1185344-IHW40T120
Manufacturer Homepage www.infineon.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IHW40T120 CAD Model

Description

The IHW40T120 is a discrete IGBT (Insulated Gate Bipolar Transistor) manufactured by Infineon Technologies. This device is designed for high-speed switching applications requiring a balance of efficiency and robustness. It is commonly used in various power electronic systems where efficient energy conversion is critical.

Applications

  • Frequency Converters
  • Uninterruptible Power Supplies (UPS)
  • Industrial Motor Drives
  • Solar Inverters
  • Welding Equipment

Features

  • 1200V Blocking Voltage: Suitable for high voltage applications.
  • 40A Continuous Collector Current: Capable of handling substantial current loads.
  • TRENCHSTOP™ Technology: Optimizes conduction and switching losses.
  • Very Fast Switching: Enables high-frequency operation.
  • Low VCE(sat): Reduces conduction losses.
  • Positive Temperature Coefficient: Facilitates paralleling for higher power applications.

Benefits

  • High Efficiency: Reduces energy waste and minimizes heat generation.
  • Reliable Operation: Designed for stable performance in demanding environments.
  • Compact Design: Enables smaller and lighter power electronic systems.
  • Improved Thermal Management: Reduces the need for extensive cooling solutions.
  • Lower System Cost: Optimizes component selection and reduces overall system complexity.

Additional Details

The IHW40T120 leverages Infineon's TRENCHSTOP™ technology to minimize both conduction and switching losses, enhancing overall system efficiency. Its fast switching speed enables higher operating frequencies, leading to smaller and more compact power electronic designs. The low VCE(sat) further contributes to reduced conduction losses, improving energy conversion efficiency. The positive temperature coefficient allows for safe and easy paralleling of multiple IGBTs, enabling the construction of high-power systems. This IGBT is typically packaged in a TO-247 housing, offering good thermal performance and ease of mounting. Its robust design ensures reliable operation in harsh industrial environments, making it a suitable choice for demanding applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $6.2566 $62.5660
23+ $5.1340 $118.0820
35+ $4.9734 $174.0690
48+ $4.8129 $231.0192
63+ $4.6523 $293.0949
84+ $4.1719 $350.4396
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 478 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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