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IKD06N60RAATMA1

Part No IKD06N60RAATMA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT TRENCH/FS 600V 12A TO252-3  /  IGBT Trench Field Stop 600 V 12 A 100 W Surface Mount PG-TO252-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr Infineon Technologies
Series TrenchStop™
Package Tape & Reel
Product Status Obsolete
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 12 A
Current - Collector Pulsed (Icm) 18 A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 6A
Power - Max 100 W
Switching Energy 110µJ (on), 220µJ (off)
Input Type Standard
Gate Charge 48 nC
Td (on/off) @ 25°C 12ns/127ns
Test Condition 400V, 6A, 23Ohm, 15V
Reverse Recovery Time (trr) 68 ns
Temperature Range - Operating -40°C ~ 175°C (TJ)
Mounting SMD (SMT)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package PG-TO252-3
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP000729342,2156-IKD06N60RAATMA1,IKD06N60RAATMA1TR,IKD06N60RAATMA1CT,IKD06N60RAATMA1DKR,IFEINFIKD06N60RAATMA1
Standard Package 2,500
Win Source Part Number 972723-IKD06N60RAATMA1
Ultra Librarian 3D Model Ultra Librarian IKD06N60RAATMA1 CAD Model

Description

The IKD06N60RAATMA1 is an IGBT transistor designed for use in various electronic applications.

  • Transistor Type: TrenchStop™
  • Power: 100W
  • Collector-Emitter Breakdown Voltage: 600V
  • Maximum Collector Current: 12A
  • Gate Charge: 48nC
  • Reverse Recovery Time: 68ns
  • Switching Energy (On): 110µJ
  • Switching Energy (Off): 220µJ
  • Description: The IKD06N60RAATMA1 is ideal for use in various electronic applications that require a high power handling capacity.

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.3409 $67.0450
120+ $1.1003 $132.0360
185+ $1.0658 $197.1730
255+ $1.0315 $263.0325
325+ $0.9971 $324.0575
435+ $0.8939 $388.8465
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Availability: 6,190 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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