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IKD06N60RATMA1 Real Image
Same model may have multiple batches, images only for reference.

IKD06N60RATMA1

Part No IKD06N60RATMA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 12A 100W TO252 / Trans IGBT Chip N-CH 600V 12A 100000mW Automotive 3-Pin(2+Tab) DPAK T/R
Datasheet
IKD06N60RATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series TrenchStop
Packaging Reel package
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 12A
Current - Collector Pulsed (Icm) 18A
Vce(on) (Maximum) @ Vge, Ic 2.1V @ 15V, 6A
Power - Max 100W
Switching Energy 110μJ (on), 220μJ (off)
Input Type Standard
Gate Charge 48nC
Td (on/off) @ 25°C 12ns/127ns
Test Condition 400V, 6A, 23 Ohm, 15V
Reverse Recovery Time (trr) 68ns
Operating Temperature Range -40°C ~ 175°C (TJ)
Mounting SMD
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Manufacturer Package PG-TO252-3
Win Source Part Number 776734-IKD06N60RATMA1
Popularity Medium
Supply and Demand Status Limited
Family Name IKD06N60R
ECCN EAR99
Country of Origin China, Malaysia
Halogen Free Compliant
Estimated EOL Date 2028
Ultra Librarian 3D Model Ultra Librarian IKD06N60RATMA1 CAD Model

Description

The Infineon Technologies IKD06N60RATMA1 is a TrenchStop IGBT transistor that can handle a current collector of 12A and has a voltage - collector emitter breakdown of 600V.

  • Current Collector: 12A
  • Voltage - Collector Emitter Breakdown: 600V
  • Vce(on) (Maximum) @ Vge, Ic: 2.1V @ 15V, 6A
  • Reverse Recovery Time (trr): 68ns
  • Applications: Inverter welding machines, solar inverters, and uninterruptible power supplies
  • Package: PG-TO252-3
  • Packaging: Reel

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145+ $0.7906 $114.6370
220+ $0.7659 $168.4980
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525+ $0.6423 $337.2075
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