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IKP03N120H2 Real Image
Same model may have multiple batches, images only for reference.

IKP03N120H2

Part No IKP03N120H2
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT, 9.6A, 1200V, N-CHANNEL
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr Infineon Technologies
Package Bulk
Product Status Active
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 9.6 A
Current - Collector Pulsed (Icm) 9.9 A
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 3A
Power - Max 62.5 W
Switching Energy 290µJ
Input Type Standard
Gate Charge 22 nC
Td (on/off) @ 25°C 9.2ns/281ns
Test Condition 800V, 3A, 82Ohm, 15V
Reverse Recovery Time (trr) 42 ns
Temperature Range - Operating -40°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package PG-TO220-3-1
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 602678-IKP03N120H2
Ultra Librarian 3D Model Ultra Librarian IKP03N120H2 CAD Model

Description

The 602678-IKP03N120H2 is a single IGBT transistor designed for high power applications manufactured by Infineon Technologies.

  • Power Dissipation: 62.5W (Maximum)
  • Reverse Recovery Time: 42ns
  • Collector-Emitter Breakdown Voltage: 1200V
  • Collector Current: 9.6A (Maximum)
  • On-Voltage: 2.8V @ 15V Gate-Emitter Voltage and 3A Collector Current
  • Gate Charge: 22nC
  • Switching Energy: 290µJ
  • Mounting Type: Through Hole
  • Package: TO-220-3
  • Operating Temperature: -40°C to 150°C
  • Product Status: Active

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Quantity Unit Price Ext. Price
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10+ $13.7600 $137.6000
15+ $13.3306 $199.9590
21+ $12.9011 $270.9231
26+ $12.4703 $324.2278
35+ $11.1806 $391.3210
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Availability: 7,100 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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