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Same model may have multiple batches, images only for reference.
APT20GF120BRDQ1G Real Image
Same model may have multiple batches, images only for reference.

APT20GF120BRDQ1G

Part No APT20GF120BRDQ1G
Manufacturer Microsemi Corporation
Catalog IGBTs - Single
Description IGBT 1200V 36A 200W TO247
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr Microsemi Corporation
Package Tube
Product Status Obsolete
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 36 A
Current - Collector Pulsed (Icm) 64 A
Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 15A
Power - Max 200 W
Switching Energy 895µJ (on), 840µJ (off)
Input Type Standard
Gate Charge 100 nC
Td (on/off) @ 25°C 10ns/120ns
Test Condition 800V, 15A, 4.3Ohm, 15V
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247 [B]
Base Product Number APT20GF120
Standard Package 30 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 563976-APT20GF120BRDQ1G
Ultra Librarian 3D Model Ultra Librarian APT20GF120BRDQ1G CAD Model

Description

The APT20GF120BRDQ1G is a single IGBT from Microsemi Corporation.

  • Category: Discrete semiconductor products
  • Application: Transistors
  • Power Rating: 200W
  • Collector-Emitter Breakdown Voltage: 1200V
  • Collector Current: 36A
  • Pulsed Current Rating: 64A
  • On-State Voltage Drop: 3.2V @ 15V gate-emitter voltage and 15A collector current
  • Switching Energy (On): 895μJ
  • Switching Energy (Off): 840μJ
  • Mounting: Through-hole
  • Package: TO-247-3
  • Operating Temperature: -55°C to 150°C
  • Status: Obsolete
  • ECCN: EAR99
  • REACH: Unaffected
  • MSL: 1 (unlimited)

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