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Same model may have multiple batches, images only for reference.
IKP15N65F5XKSA1 Real Image
Same model may have multiple batches, images only for reference.

IKP15N65F5XKSA1

Part No IKP15N65F5XKSA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 650V 30A 105W PG-TO220-3
Datasheet
IKP15N65F5XKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
VCEO Maximum Collector-Emitter Breakdown Voltage 650V
Maximum Current Collector 30A
Pulsed Collector Current 45A
Collector-emitter saturation voltage(Max) 2.1V @ 15V, 15A
Maximum Power Dissipation 105W
Total Switching Energy(Ets) 130μJ (on), 40μJ (off)
Input Type Standard
Gate Charge 38nC
Turn-on and Turn-off delay time 17ns/150ns
Testing Conditions 400V, 7.5A, 39 Ohm, 15V
Reverse Recovery Time (trr) 50ns
Temperature Range - Operating -40°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3
Win Source Part Number 1045278-IKP15N65F5XKSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IKP15N65F5XKSA1 CAD Model

Description

The Infineon Technologies IKP15N65F5XKSA1 is a through-hole IGBT transistor with a maximum current collector of 30A and a maximum power dissipation of 105W.

  • VCEO Maximum Collector-Emitter Breakdown Voltage: 650V
  • Collector-Emitter Saturation Voltage: 2.1V @ 15V, 15A
  • Reverse Recovery Time (trr): 50ns
  • Turn-On and Turn-Off Delay Time: 17ns/150ns
  • Package: PG-TO220-3

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