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IKP15N65H5XKSA1

Part No IKP15N65H5XKSA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 650V 30A TO220-3 / IGBT 650 V 30 A 105 W Through Hole PG-TO220-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr Infineon Technologies
Series TrenchStop®
Package Tube
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 30 A
Current - Collector Pulsed (Icm) 45 A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 15A
Power - Max 105 W
Switching Energy 120µJ (on), 50µJ (off)
Input Type Standard
Gate Charge 38 nC
Td (on/off) @ 25°C 17ns/160ns
Test Condition 400V, 7.5A, 39Ohm, 15V
Reverse Recovery Time (trr) 48 ns
Temperature Range - Operating -40°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package PG-TO220-3
Base Product Number IKP15N65
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 448-IKP15N65H5,448-IKP15N65H5-ND,IKP15N65H5,2156-IKP15N65H5XKSA1,INFINFIKP15N65H5XKSA1,SP001001718
Standard Package 50
Win Source Part Number 1064841-IKP15N65H5XKSA1
Ultra Librarian 3D Model Ultra Librarian IKP15N65H5XKSA1 CAD Model

Description

The Infineon Technologies IGBT is a single transistor designed for high power applications.

  • Maximum Power: 105W
  • Reverse Recovery Time: 48ns
  • Device Type: N-Channel
  • Collector-Emitter Breakdown Voltage: 650V
  • Maximum Collector Current: 30A
  • Switching Energy (On): 120µJ
  • Switching Energy (Off): 50µJ
  • Gate Charge: 38 nC
  • Maximum Vgs: ±20V
  • Operating Temperature: -40°C to 175°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.0048 $60.1440
75+ $1.6451 $123.3825
110+ $1.5937 $175.3070
150+ $1.5423 $231.3450
195+ $1.4909 $290.7255
260+ $1.3367 $347.5420
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,500 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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