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IKQ75N120CT2XKSA1

Part No IKQ75N120CT2XKSA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 1200V 150A TO247-3 / IGBT Trench Field Stop 1200 V 150 A 938 W Through Hole PG-TO247-3-46
Sample
Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr Infineon Technologies
Series TRENCHSTOP™
Package Tube
Product Status Not For New Designs
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 150 A
Current - Collector Pulsed (Icm) 300 A
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 75A
Power - Max 938 W
Switching Energy 6.7mJ (on), 4.1mJ (off)
Input Type Standard
Gate Charge 370 nC
Td (on/off) @ 25°C 37ns/328ns
Test Condition 600V, 75A, 6Ohm, 15V
Temperature Range - Operating -40°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package PG-TO247-3-46
Base Product Number IKQ75N120
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1353474-IKQ75N120CT2XKSA1
Ultra Librarian 3D Model Ultra Librarian IKQ75N120CT2XKSA1 CAD Model

Description

The IKQ75N120CT2XKSA1 is a single IGBT (Insulated Gate Bipolar Transistor) from Infineon Technologies.

  • Series: TRENCHSTOP™
  • Operating Temperature: -40°C to 175°C
  • Maximum Collector Current: 150A
  • Maximum Collector-Emitter Breakdown Voltage: 1200V
  • Mounting Type: Through Hole
  • Package: TO-247-3
  • Gate Charge: 370nC
  • Switching Energy (On): 6.7mJ
  • Switching Energy (Off): 4.1mJ

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Quantity Unit Price Ext. Price
3+ $24.0981 $72.2943
6+ $19.7728 $118.6368
8+ $19.1549 $153.2392
11+ $18.5370 $203.9070
14+ $17.9191 $250.8674
19+ $16.0654 $305.2426
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