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Same model may have multiple batches, images only for reference.
IKW15T120 Real Image
Same model may have multiple batches, images only for reference.

IKW15T120

Part No IKW15T120
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 1200V 30A 110W TO247-3
Datasheet
IKW15T120 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
IGBT Type NPT, Trench Field Stop
VCEO Maximum Collector-Emitter Breakdown Voltage 1200V
Maximum Current Collector 30A
Pulsed Collector Current 45A
Collector-emitter saturation voltage(Max) 2.2V @ 15V, 15A
Maximum Power Dissipation 110W
Total Switching Energy(Ets) 2.7mJ
Input Type Standard
Gate Charge 85nC
Turn-on and Turn-off delay time 50ns/520ns
Testing Conditions 600V, 15A, 56 Ohm, 15V
Reverse Recovery Time (trr) 140ns
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Win Source Part Number 068791-IKW15T120
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IKW15T120 CAD Model

Description

The IKW15T120 is a through-hole IGBT manufactured by Infineon Technologies.

  • Maximum Collector-Emitter Breakdown Voltage: 1200V
  • Maximum Power Dissipation: 110W
  • Reverse Recovery Time (trr): 140ns
  • Gate Charge: 85nC
  • Testing Conditions: 600V, 15A, 56 Ohm, and 15V
  • Popularity: Medium
  • Supply and Demand Status: Balanced

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