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Same model may have multiple batches, images only for reference.
IKW50N60T Infineon Technologies
Same model may have multiple batches, images only for reference.

IKW50N60T

Part No IKW50N60T
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 80A 333W TO247-3 / Trans IGBT Chip N-CH 600V 80A 333000mW 3-Pin(3+Tab) TO-247 Tube
Datasheet
IKW50N60T Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
IGBT Type Trench Field Stop
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 80A
Pulsed Collector Current 150A
Collector-emitter saturation voltage(Max) 2V @ 15V, 50A
Maximum Power Dissipation 333W
Total Switching Energy(Ets) 2.6mJ
Input Type Standard
Gate Charge 310nC
Turn-on and Turn-off delay time 26ns/299ns
Testing Conditions 400V, 50A, 7 Ohm, 15V
Reverse Recovery Time (trr) 143ns
Temperature Range - Operating -40°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Win Source Part Number 017212-IKW50N60T
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name IKW50N60T
Introduction Date November 01, 2004
ECCN EAR99
Country of Origin China, Philippines
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian IKW50N60T CAD Model

Description

The Infineon Technologies IKW50N60T is a Trench Field Stop IGBT suitable for use in electronic devices that require high power switching.

  • Maximum Collector-Emitter Breakdown Voltage: 600V
  • Maximum Collector Current: 80A
  • Maximum Power Dissipation: 333W
  • Total Switching Energy: 2.6mJ
  • Turn-On Delay Time: 26ns
  • Turn-Off Delay Time: 299ns
  • Package: PG-TO247-3
  • Supply and Demand Status: Limited

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Availability: 15,000 pieces
MOQ: 22 pcs
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