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Same model may have multiple batches, images only for reference.
IKW75N65EH5XKSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IKW75N65EH5XKSA1

Part No IKW75N65EH5XKSA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT TRENCH 650V 90A TO247-3 / IGBT Trench 650 V 90 A 395 W Through Hole PG-TO247-3
Datasheet
IKW75N65EH5XKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr Infineon Technologies
Series TrenchStop™
Package Tube
IGBT Type Trench
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 90 A
Current - Collector Pulsed (Icm) 300 A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 75A
Power - Max 395 W
Switching Energy 2.3mJ (on), 900µJ (off)
Input Type Standard
Gate Charge 160 nC
Td (on/off) @ 25°C 28ns/174ns
Test Condition 400V, 75A, 8Ohm, 15V
Reverse Recovery Time (trr) 92 ns
Temperature Range - Operating -40°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package PG-TO247-3
Base Product Number IKW75N65
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP001257948
Standard Package 30
Win Source Part Number 1176208-IKW75N65EH5XKSA1
Ultra Librarian 3D Model Ultra Librarian IKW75N65EH5XKSA1 CAD Model

Description

The 1176208-IKW75N65EH5XKSA1 is a discrete semiconductor product designed for use in transistors, specifically IGBTs. It is a member of the TrenchStop series and features a TO-247-3 package.

  • GPTDescription: The product can handle a maximum power of 395 W and has a reverse recovery time of 92 ns.
  • GPTDescription: The IGBT type is trench, and the voltage for collector emitter breakdown is 650 V.
  • GPTDescription: The product can handle a maximum collector current of 90 A and a maximum collector pulsed current of 300 A.
  • GPTDescription: The switching energy for the product is 2.3mJ (on) and 900µJ (off).
  • GPTDescription: The input type is standard, and the gate charge is 160 nC.
  • GPTDescription: The product has a Td (on/off) @ 25°C of 28ns/174ns and operates within a temperature range of -40°C to 175°C (TJ).
  • GPTDescription: The 1176208-IKW75N65EH5XKSA1 is an excellent choice for developers who require a reliable transistor for their projects.

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