IMBG120R045M1HXTMA1

Part No IMBG120R045M1HXTMA1
Manufacturer Infineon Technologies
Catalog FETs - Single
Description SICFET N-CH 1.2KV 47A TO263
Datasheet
Sample
Rohs State rohs
ECAD Module
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Win Source Part Number WS1202144-IMBG120R045M1HXTMA1
Manufacturer Infineon Technologies
Category Discrete Semiconductor Products -Transistors- FETs, MOSFETs -Single FETs, MOSFETs
Series CoolSiC™
Package Tape & Reel (TR) Cut Tape (CT)
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Rds On (Max) @ Id, Vgs 63mOhm @ 16A, 18V
Operating Temperature -55°C ~ 175°C (TJ)

Description

The CoolSiC™ transistor, manufactured by Infineon Technologies, is a high-performance silicon carbide (SiC) field-effect transistor (FET). It is designed for various applications that require high voltage and low on-resistance. With a drain to source voltage (Vdss) of 1200V and an on-resistance (Rds On) of 63mOhm @ 16A, 18V, it provides efficient power switching capabilities. The CoolSiC™ transistor operates in a wide temperature range from -55°C to 175°C (TJ), making it suitable for harsh environments. This product is currently active and available in tape & reel (TR) cut tape (CT) packaging.

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