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Same model may have multiple batches, images only for reference.
IMBG120R045M1HXTMA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IMBG120R045M1HXTMA1

Part No IMBG120R045M1HXTMA1
Manufacturer Infineon Technologies
Catalog FETs - Single
Description SICFET N-CH 1.2KV 47A TO263
Datasheet
IMBG120R045M1HXTMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Win Source Part Number WS1202144-IMBG120R045M1HXTMA1
Manufacturer Infineon Technologies
Category Discrete Semiconductor Products -Transistors- FETs, MOSFETs -Single FETs, MOSFETs
Series CoolSiC™
Package Tape & Reel (TR) Cut Tape (CT)
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Rds On (Max) @ Id, Vgs 63mOhm @ 16A, 18V
Operating Temperature -55°C ~ 175°C (TJ)
Ultra Librarian 3D Model Ultra Librarian IMBG120R045M1HXTMA1 CAD Model

Description

The CoolSiC™ transistor, manufactured by Infineon Technologies, is a high-performance silicon carbide (SiC) field-effect transistor (FET).

  • Drain to Source Voltage (Vdss): 1200V
  • On-Resistance (Rds On): 63mOhm @ 16A, 18V
  • Temperature Range: -55°C to 175°C (TJ)
  • Status: Active
  • Packaging: Tape & Reel (TR) Cut Tape (CT)

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