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Same model may have multiple batches, images only for reference.
IMBG65R039M1HXTMA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IMBG65R039M1HXTMA1

Part No IMBG65R039M1HXTMA1
Manufacturer Infineon Technologies
Catalog FETs - Single
Description SILICON CARBIDE MOSFET PG-TO263-
Datasheet
IMBG65R039M1HXTMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Win Source Part Number WS1202684-IMBG65R039M1HXTMA1
Manufacturer Infineon Technologies
Category Discrete Semiconductor Products- Transistors- FETs, MOSFETs -Single FETs, MOSFETs
Series CoolSiC™
Package Tape & Reel (TR) Cut Tape (CT)
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Ultra Librarian 3D Model Ultra Librarian IMBG65R039M1HXTMA1 CAD Model

Description

The Infineon Technologies CoolSiC™ is a high-performance N-Channel SiCFET (Silicon Carbide Field Effect Transistor) designed for various applications in the field of discrete semiconductor products.

  • Drain to Source Voltage (Vdss): 650V
  • Operating Temperature Range: -55°C to 175°C
  • Series: CoolSiC™
  • Packaging: tape & reel (TR) and cut tape (CT)

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Quantity Unit Price Ext. Price
3+ $25.0249 $75.0747
6+ $20.5334 $123.2004
9+ $19.8916 $179.0244
12+ $19.2501 $231.0012
16+ $18.6084 $297.7344
21+ $16.6833 $350.3493
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Availability: 47 pieces
MOQ: 3 pcs
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