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IMBG65R048M1HXTMA1

Part No IMBG65R048M1HXTMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description SILICON CARBIDE MOSFET PG-TO263-
Datasheet
Sample
Rohs State rohs
ECAD Module
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Win Source Part Number WS1202208-IMBG65R048M1HXTMA1
Win Source Part Number Cross
Manufacturer Infineon Technologies
Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Series CoolSiC™
Package Tape & Reel (TR) Cut Tape (CT)
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 45A (Tc)
Ultra Librarian 3D Model Ultra Librarian IMBG65R048M1HXTMA1 CAD Model

Description

The Infineon Technologies CoolSiC MOSFET is a single N-channel FET with a drain to source voltage of 650V.

  • Channel Type: N-channel
  • Drain to Source Voltage: 650V
  • Technology: SiCFET (Silicon Carbide)
  • Package: Tape and Reel

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $15.0764 $60.3056
9+ $14.1036 $126.9324
13+ $13.6174 $177.0262
19+ $12.6446 $240.2474
24+ $12.1584 $291.8016
30+ $11.6720 $350.1600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 213,000 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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