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Same model may have multiple batches, images only for reference.
IMBG65R057M1HXTMA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IMBG65R057M1HXTMA1

Part No IMBG65R057M1HXTMA1
Manufacturer Infineon Technologies
Catalog FETs - Single
Description SILICON CARBIDE MOSFET PG-TO263-
Datasheet
IMBG65R057M1HXTMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Win Source Part Number WS1202797-IMBG65R057M1HXTMA1
Manufacturer Infineon Technologies
Category Discrete Semiconductor Products- Transistors FETs, MOSFETs -Single FETs, MOSFETs
Series CoolSiC™
Package Tape & Reel (TR) Cut Tape (CT)
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Rds On (Max) @ Id, Vgs 74mOhm @ 16.7A, 18V
Supplier Device Package PG-TO263-7-12
Ultra Librarian 3D Model Ultra Librarian IMBG65R057M1HXTMA1 CAD Model

Description

The Infineon Technologies CoolSiC is a N-Channel MOSFET designed for high voltage applications.

  • Channel Type: N-Channel
  • Drain to Source Voltage (Vdss): 650V
  • Maximum On-Resistance (Rds On): 74mOhm @ 16.7A, 18V
  • Technology: Silicon Carbide (SiC)
  • Series: CoolSiC
  • Package: Tape & Reel

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