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IMW120R030M1HXKSA1

Part No IMW120R030M1HXKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description SICFET N-CH 1.2KV 56A TO247-3 / N-Channel 1200 V 56A (Tc) 227W (Tc) Through Hole PG-TO247-3-41
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolSiC™
Package Tube
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Rds On (Max) @ Id, Vgs 40mOhm @ 25A, 18V
Vgs(th) (Max) @ Id 5.7V @ 10mA
Gate Charge (Qg) (Max) @ Vgs 63 nC @ 18 V
Vgs (Max) +23V, -7V
Input Capacitance (Ciss) (Max) @ Vds 2120 pF @ 800 V
FET Feature -
Power Dissipation (Max) 227W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3-41
Package / Case TO-247-3
Base Product Number IMW120
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1353466-IMW120R030M1HXKSA1
Ultra Librarian 3D Model Ultra Librarian IMW120R030M1HXKSA1 CAD Model

Description

The IMW120R030M1HXKSA1 is a N-Channel SiCFET transistor from Infineon Technologies. It is part of the CoolSiC™ series and comes in a TO-247-3 package.

  • Transistor Type: N-Channel SiCFET
  • Series: CoolSiC™
  • Package: TO-247-3
  • Drain to Source Voltage (Vdss): 1200 V
  • Continuous Drain Current (Id) @ 25°C: 56A
  • Maximum On-State Resistance (Rds On) @ 25A, 18V: 40mOhm
  • Gate-Source Threshold Voltage (Vgs(th)) @ 10mA: 5.7V
  • Gate Charge (Qg) @ 18V: 63 nC
  • Applications: High-Power Switching

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