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Same model may have multiple batches, images only for reference.
IMW65R048M1HXKSA1 Real Image
Same model may have multiple batches, images only for reference.

IMW65R048M1HXKSA1

Part No IMW65R048M1HXKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 650V NCH SIC TRENCH
Datasheet
IMW65R048M1HXKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolSIC™ M1
Package Tube
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 39A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 64mOhm @ 20.1A, 18V
Vgs(th) (Max) @ Id 5.7V @ 6mA
Gate Charge (Qg) (Max) @ Vgs 33 nC @ 18 V
Vgs (Max) +23V, -5V
Input Capacitance (Ciss) (Max) @ Vds 1118 pF @ 400 V
Power Dissipation (Max) 125W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3-41
Package / Case TO-247-3
Base Product Number IMW65R048
Standard Package 30 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 874564-IMW65R048M1HXKSA1
Ultra Librarian 3D Model Ultra Librarian IMW65R048M1HXKSA1 CAD Model

Description

The IMW65R048M1HXKSA1 is a N-Channel SiCFET (Silicon Carbide) transistor designed for use in various electronic applications. It has a drain to source voltage of 650V and a continuous drain current of 39A @ 25°C.

  • Drain to Source Voltage: 650V
  • Continuous Drain Current: 39A @ 25°C
  • Maximum On-Resistance: 64mOhm @ 20.1A and 18V
  • Maximum Gate-Source Voltage: +23V and -5V
  • Operating Temperature: -55°C to 150°C
  • Mounting: Through-Hole
  • Package Size: TO-247-3
  • Manufacturer: Infineon Technologies

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