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IPA075N15N3G

Part No IPA075N15N3G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 43A TO220-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 43A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
Gate-Source Threshold Voltage 4V @ 270μA
Max Gate Charge 93nC @ 10V
Max Input Capacitance 7280pF @ 75V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 39W (Tc)
Maximum Rds On at Id,Vgs 7.5 mOhm @ 43A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3
Dimension TO-220-3 Full Pack
Win Source Part Number 068931-IPA075N15N3G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPA075N15N3G CAD Model

Description

The Infineon Technologies IPA075N15N3G is a N-channel MOSFET transistor that is designed to work in through-hole mounting. It has a maximum power dissipation of 39W and a drain-source breakdown voltage of 150V. The continuous drain current @ 25°C is 43A (Tc). The gate-source threshold voltage is 4V @ 270μA and the maximum gate charge is 93nC @ 10V. The maximum Rds On @ Id,Vgs is 7.5 mOhm @ 43A, 10V. This MOSFET transistor is part of the Discrete Semiconductor Products category and is popular in the market. It is an active component that operates in a temperature range of -55°C to 175°C (TJ). The packaging is done in tube/rail and the case/package is PG-TO220-3. The dimension of the product is TO-220-3 Full Pack.

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $2.8889 $52.0002
43+ $2.3704 $101.9272
66+ $2.2963 $151.5558
90+ $2.2223 $200.0070
117+ $2.1482 $251.3394
156+ $1.9260 $300.4560
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,000 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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