The IPA093N06N3G is a CoolMOS™ power MOSFET from Infineon Technologies. This N-channel MOSFET is designed for high-efficiency switching applications, offering low on-resistance and fast switching speeds. It is suitable for a wide range of power electronic systems.

Applications:

• Synchronous Rectification in AC/DC Power Supplies
• DC/DC Converters
• Motor Control
• Power Tools
• Battery Management Systems (BMS)

Features:

• N-Channel, normal level: Enhances design flexibility.
• Ultra low on-resistance R<sub>DS(on): Reduces conduction losses.
• High dv/dt ruggedness: Ensures reliable operation in harsh environments.
• 100% Avalanche tested: Provides high reliability and robustness.
• Pb-free plating; RoHS compliant: Environmentally friendly.
• Qualified according to JEDEC for target applications: Ensures quality and reliability.

Benefits:

• High Efficiency: Reduced power losses lead to cooler operation and higher system efficiency.
• Improved Power Density: Allows for smaller and lighter power supply designs.
• Enhanced Reliability: Rugged design ensures long-term performance.
• Reduced System Cost: High efficiency reduces the need for bulky heat sinks.
• Easy to Design-In: Standard gate drive characteristics simplify design.

Additional Details:

The IPA093N06N3G features a drain-source voltage (V<sub>DS) of 60V and a continuous drain current (I<sub>D) of 93A. The typical gate charge (Q<sub>g) is very low, contributing to faster switching speeds and reduced gate drive losses. The device is available in a PG-TDSON-8 package. The on-state resistance (R<sub>DS(on)) is typically around 9.3 mΩ at V<sub>GS = 10V. This MOSFET is designed to operate over a wide temperature range, ensuring stable performance in various applications. The logic level gate drive simplifies the design, enabling direct drive from microcontrollers.