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IPA126N10N3G

Part No IPA126N10N3G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description 35A, 100V, 0.0126OHM, N-CHANNEL
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS™3
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 12.6mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 3.5V @ 45µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2500 pF @ 50 V
Power Dissipation (Max) 33W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-111
Package / Case TO-220-3 Full Pack
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 0000.00.0000
Win Source Part Number 753688-IPA126N10N3G
Ultra Librarian 3D Model Ultra Librarian IPA126N10N3G CAD Model

Description

The 753688-IPA126N10N3G is a N-Channel MOSFET transistor from the OptiMOS™3 series by Infineon Technologies.

  • Type: N-Channel MOSFET transistor
  • Series: OptiMOS™3
  • Manufacturer: Infineon Technologies
  • Applications: designed for use in discrete semiconductor products, specifically in transistors and FETs
  • Drain to Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id) @ 25°C: 35A
  • Rds On (Max) @ Id, Vgs: 12.6mOhm @ 35A and 10V
  • Gate Charge (Qg) @ 10V: 35nC @ 10V
  • Package Type: TO-220-3 Full Pack
  • Temperature Range: -55°C to 175°C
  • Status: active product

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $14.7632 $59.0528
10+ $12.1136 $121.1360
15+ $11.7348 $176.0220
21+ $11.3560 $238.4760
27+ $10.9783 $296.4141
36+ $9.8429 $354.3444
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Availability: 19,100 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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