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IPA50R190CE

Part No IPA50R190CE
Manufacturer Infineon Technologies
Catalog FETs - Single
Description 500V CoolMOS™ CE Power MOSFET | MOSFET N-CH 500V 18.5A TO220FP
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 500V
Id - Continuous Drain Current 18.5A
Drive Voltage (Max Rds On, Min Rds On) 13V
Rds On (Maximum) at Id, Vgs 190mOhm at 6.2A, 13V
Gate Source Voltage(th) (Maximum) at Id 3.5V at 510μA
Gate Charge (Qg) (Maximum) at Vgs 47.2nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1137pF at 100V
FET Feature Super Junction
Power Dissipation (Maximum) 32W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package PG-TO220-FP
Manufacturer Package TO-220-3 Full Pack
Manufacturer Pack Quantity 500
MSL Level 1 (Unlimited)
Win Source Part Number 1185970-IPA50R190CE
Manufacturer Homepage www.infineon.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPA50R190CE CAD Model

Description

The Infineon IPA50R190CE is a Super Junction MOSFET transistor with N-Channel polarity.

  • Drain-Source Breakdown Voltage: 500V (maximum)
  • Continuous Drain Current: 18.5A
  • Rds On: 190mOhm @ 6.2A and 13V
  • Gate-Source Voltage (th): 3.5V @ 510μA
  • Gate Charge (Qg): 47.2nC @ 10V
  • Input Capacitance (Ciss): 1137pF @ 100V
  • Package: PG-TO220-FP
  • Power Dissipation: 32W (maximum)
  • Application: Discrete Semiconductor Products
  • Product Status: Obsolete
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.0839 $54.1950
100+ $1.0140 $101.4000
155+ $0.9791 $151.7605
220+ $0.9091 $200.0020
290+ $0.8742 $253.5180
360+ $0.8392 $302.1120
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 53,399 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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