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Same model may have multiple batches, images only for reference.
IPA60R750E6 Real Image
Same model may have multiple batches, images only for reference.

IPA60R750E6

Part No IPA60R750E6
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 5.7A TO220
Datasheet
IPA60R750E6 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 5.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 170μA
Max Gate Charge 17.2nC @ 10V
Max Input Capacitance 373pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 27W (Tc)
Maximum Rds On at Id,Vgs 750 mOhm @ 2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-FP
Dimension TO-220-3 Full Pack
Win Source Part Number 068954-IPA60R750E6
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPA60R750E6 CAD Model

Description

The Infineon Technologies 068954-IPA60R750E6 is a N-Channel MOSFET that comes in PG-TO-220-FP package.

  • Maximum Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 5.7A @ 25°C
  • Power Dissipation: 27W (Tc)
  • Gate-Source Threshold Voltage: 3.5V @ 170μA
  • Max Gate Charge: 17.2nC @ 10V
  • Maximum Rds On: 750 mOhm @ 2A, 10V
  • Maximum Input Capacitance: 373pF @ 100V
  • Product Category: Discrete Semiconductor Products
  • Market Popularity: Medium

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4+ $19.2492 $76.9968
8+ $15.7946 $126.3568
12+ $15.3014 $183.6168
16+ $14.8071 $236.9136
21+ $14.3139 $300.5919
28+ $12.8332 $359.3296
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